wide bandgap semiconductor meaning in Chinese
宽禁带半导体
Examples
- Wide bandgap semiconductor
宽禁带半导体 - Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar
Algan / ganhemt的高频大功率应用在很大程度上受制于电流崩塌效应。 - As a wide bandgap semiconductor material , silicon carbide is an exellent material with superior thermal , electrical , mechanical and chemical properties for the fabrication of high temperature , high power , high frequency and radiation hardening electronic devices
Sic是一种宽带隙半导体材料、第三代半导体材料的代表，是制造高温、高频、大功率、抗辐照等半导体器件的优选材料，又被称为极端电子学材料，在微电子学领域具有广阔的应用前景。 - Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors , bulk - acoustic - wave devices , surface - acoustic - wave devices , varistors , light emitting , light detecting devices and so on . undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一种新型的直接带隙宽禁带半导体材料,具有六方纤锌矿结构,较高的激子束缚能( 60mev ) ,较低的电子诱生缺陷和阈值电压低等优点,在uv探测器、蓝紫光led和ld等光电子器件领域有巨大的应用潜景。